The number of Internet devices and users is growing sharply and constantly. Access to the Internet via mobile devices is supported by the gradual introduction of the new 5G standard, that provides larger data transmission speeds and number of users, reduced latency and higher reliability. The power amplifier, the device that drives the antenna, plays a key role about efficiency and operative costs of a radio base station in the transmission chain of 5G communications. In order to efficiently amplify 5G signals, which have complex modulation schemes and they are characterised by high Peak-to-Average-Power-Ratio, the Doherty topology is used. The following thesis work concerns about the design of an integrated 8 W Dual-Driver Doherty power amplifier, for the 3.4GHz-3.6GHz band, in GaN over Silicon technology of Infineon. The utilisation of Gallium Nitride, an innovative wide-bandgap semiconductor, enables to get very good performances about power, frequency, gain, efficiency and cost. This thesis is based on the work carried out at the RF design department of Infineon Technologies in Villach-Austria.
Il numero di dispositivi e utilizzatori di Internet è in costante e rapida crescita. L'accesso ad Internet tramite dispositivi mobili è supportato dalla graduale introduzione del nuovo standard 5G, che permette velocità di trasmissione dati e numero di utenti maggiori, latenze ridotte ed alta affidabilità. Nella catena di trasmissione delle comunicazioni 5G, l'amplificatore di potenza, che fornisce il segnale all'antenna, gioca un ruolo chiave circa l'efficienza e i costi operativi di una stazione radio base. Per amplificare efficientemente segnali 5G, che presentano schemi di modulazione complessi, caratterizzati da un elevato Peak-to-Average-Power-Ratio, è impiegata la topologia Doherty. Il seguente lavoro di tesi riguarda la progettazione di un amplificatore di potenza Doherty integrato Dual-Driver, per la banda 3.4GHz-3.6GHz da 8Watt, in tecnologia GaN over Silicon di Infineon Technologies. L'impiego del Nitruro di Gallio, un innovativo semiconduttore a wide-bandgap, permette di avere ottime prestazioni di potenza, frequenza, guadagno, efficienza e costo. Questa tesi è stata scritta basandosi sul lavoro svolto nel reparto di progettazione RF di Infineon Technologies di Villach-Austria.
Design of a Doherty Power Amplifier in GaN Technology for 5G Applications
PARENZAN RUPENA, MARCO
2021/2022
Abstract
The number of Internet devices and users is growing sharply and constantly. Access to the Internet via mobile devices is supported by the gradual introduction of the new 5G standard, that provides larger data transmission speeds and number of users, reduced latency and higher reliability. The power amplifier, the device that drives the antenna, plays a key role about efficiency and operative costs of a radio base station in the transmission chain of 5G communications. In order to efficiently amplify 5G signals, which have complex modulation schemes and they are characterised by high Peak-to-Average-Power-Ratio, the Doherty topology is used. The following thesis work concerns about the design of an integrated 8 W Dual-Driver Doherty power amplifier, for the 3.4GHz-3.6GHz band, in GaN over Silicon technology of Infineon. The utilisation of Gallium Nitride, an innovative wide-bandgap semiconductor, enables to get very good performances about power, frequency, gain, efficiency and cost. This thesis is based on the work carried out at the RF design department of Infineon Technologies in Villach-Austria.File | Dimensione | Formato | |
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https://hdl.handle.net/20.500.12608/11691