Introduction to GaN and GaN-based HEMT. Mobility in HEMT and implementation of GaN mobility model in Sentaurus simulator. Quantum effects in HEMT and simultations of different back barriers (InGaN and AlGaN)
Simulations of High Mobility AlGaN/GaN Field Effect Transistors. Mobility and Quantum Effects
Omenetto, Leonardo
2012/2013
Abstract
Introduction to GaN and GaN-based HEMT. Mobility in HEMT and implementation of GaN mobility model in Sentaurus simulator. Quantum effects in HEMT and simultations of different back barriers (InGaN and AlGaN)File in questo prodotto:
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Utilizza questo identificativo per citare o creare un link a questo documento:
https://hdl.handle.net/20.500.12608/15817