The objective of this thesis is to detect which are and what role defects have in semiconductors and in particular in gallium nitride devices, through the in-depth analysis of two set of devices based on GaN: diodes realized by polarization-doping and double-heterostructure diodes with resonant tunneling phenomena.
Vertical power diodes based on bulk Gallium Nitride: role of semiconductor defects
Turrina, Martino
2020/2021
Abstract
The objective of this thesis is to detect which are and what role defects have in semiconductors and in particular in gallium nitride devices, through the in-depth analysis of two set of devices based on GaN: diodes realized by polarization-doping and double-heterostructure diodes with resonant tunneling phenomena.File in questo prodotto:
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martino_turrina_tesi.pdf
Open Access dal 21/12/2022
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Utilizza questo identificativo per citare o creare un link a questo documento:
https://hdl.handle.net/20.500.12608/28839