Physics-Based Compact Model for p-GaN/AlGaN/GaN. Application: Understanding of Degradation After Gamma-Ray Irradiation

This thesis explores the nature of gallium nitride devices from the point of view of compact modeling paying particular attention to power electronic application. To model the behavior of such devices, the physics of the typical GaN HEMT is studied by solving the Schrodinger's and Poisson's equations. The Physical-Based model is used to help our understanding of the effect of gamma irradiation on GaN based devices.