Characterization of defects and instabilities of vertical GaN power devices

In this thesis work, vertical GaN semiconductor structures for power applications are characterized. Specifically, the study focuses on Schottky Barrier Diodes and MOS-caps, from a structure standpoint. Different measurements are taken, such as I-Vs, breakdown voltage, C-Vs and photoassisted C-Vs among the electrical ones. Optical measurements are related to back electroluminescence phenomena, having their intensity measured. For diodes, I-V curves, leakage currents, breakdown voltages and Schottky barrier height are evaluated. For MOS-Caps the study focuses on interface defects density estimation, trapping kinetics and understanding a hump-like behavior in C-V curves.