This thesis reports a summary of the experimental results for electronic devices based on Gallium Nitride (GaN). The analysis conducted was mainly based on test structures developed by STMicroelectronics and carried out in the ACME laboratories of the Department of Information Engineering of the University of Padua. This thesis led to a complete experimental characterization of the electrical characteristics in DC regime of lateral GaN devices, arranged mainly into two wafer and a few on-package devices. Initially general IV characterization were carried out in order to obtain information regarding the uniformity of distribution of the main leakage and entrapment phenomena. Subsequently, the use of techniques such as temperature IV characterization and Vth transient allowed the identification and comparison of trapping phenomena, for the purpose of studying gate reliability. This work is also focused on the analysis of the main device breakdown mechanism, where relatively simple breakdown tests made it possible to identify the main breakdown voltage threshold, identifying the catastrophic breakdown typology. Further insights are provided by applying step stress with electroluminescence analysis, with which interesting results regarding the failure spots positions have been obtained.
This thesis reports a summary of the experimental results for electronic devices based on Gallium Nitride (GaN). The analysis conducted was mainly based on test structures developed by STMicroelectronics and carried out in the ACME laboratories of the Department of Information Engineering of the University of Padua. This thesis led to a complete experimental characterization of the electrical characteristics in DC regime of lateral GaN devices, arranged mainly into two wafer and a few on-package devices. Initially general IV characterization were carried out in order to obtain information regarding the uniformity of distribution of the main leakage and entrapment phenomena. Subsequently, the use of techniques such as temperature IV characterization and Vth transient allowed the identification and comparison of trapping phenomena, for the purpose of studying gate reliability. This work is also focused on the analysis of the main device breakdown mechanism, where relatively simple breakdown tests made it possible to identify the main breakdown voltage threshold, identifying the catastrophic breakdown typology. Further insights are provided by applying step stress with electroluminescence analysis, with which interesting results regarding the failure spots positions have been obtained.
Gate Reliability of enhanced-mode p-GaN HEMTs
DISARÒ, MICHELE
2022/2023
Abstract
This thesis reports a summary of the experimental results for electronic devices based on Gallium Nitride (GaN). The analysis conducted was mainly based on test structures developed by STMicroelectronics and carried out in the ACME laboratories of the Department of Information Engineering of the University of Padua. This thesis led to a complete experimental characterization of the electrical characteristics in DC regime of lateral GaN devices, arranged mainly into two wafer and a few on-package devices. Initially general IV characterization were carried out in order to obtain information regarding the uniformity of distribution of the main leakage and entrapment phenomena. Subsequently, the use of techniques such as temperature IV characterization and Vth transient allowed the identification and comparison of trapping phenomena, for the purpose of studying gate reliability. This work is also focused on the analysis of the main device breakdown mechanism, where relatively simple breakdown tests made it possible to identify the main breakdown voltage threshold, identifying the catastrophic breakdown typology. Further insights are provided by applying step stress with electroluminescence analysis, with which interesting results regarding the failure spots positions have been obtained.File | Dimensione | Formato | |
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https://hdl.handle.net/20.500.12608/54144