The aim of this thesis work consists in the identification and modeling of the physical mechanisms that limit the stability and the performance of enhanced-mode AlGaN/GaN High Electron Mobility Transistors in OFF-state bias conditions. Initially, preliminary static characterizations have been carried out in order to evaluate DC performance and to determine which characteristics are of interest to evaluate the device degradation. Afterwards, constant voltage stress tests have been exploited to investigate the failure distribution by means of the shape factor of the Weibull plots and a degradation trend in temperature was observed. In order to address the physical reasons for the Weibull behavior, several experimental techniques (e.g. step stress, C-V, pulsed and electroluminescence measurements, sweep to breakdown) have been used. Eventually, a new device generation was evaluated in order to validate the formulated hypotheses.

The aim of this thesis work consists in the identification and modeling of the physical mechanisms that limit the stability and the performance of enhanced-mode AlGaN/GaN High Electron Mobility Transistors in OFF-state bias conditions. Initially, preliminary static characterizations have been carried out in order to evaluate DC performance and to determine which characteristics are of interest to evaluate the device degradation. Afterwards, constant voltage stress tests have been exploited to investigate the failure distribution by means of the shape factor of the Weibull plots and a degradation trend in temperature was observed. In order to address the physical reasons for the Weibull behavior, several experimental techniques (e.g. step stress, C-V, pulsed and electroluminescence measurements, sweep to breakdown) have been used. Eventually, a new device generation was evaluated in order to validate the formulated hypotheses.

OFF-state drain reliability of enhanced mode AlGaN/GaN power HEMTs: TDDB and avalanche processes

DELL'ANDREA, MATTEO
2023/2024

Abstract

The aim of this thesis work consists in the identification and modeling of the physical mechanisms that limit the stability and the performance of enhanced-mode AlGaN/GaN High Electron Mobility Transistors in OFF-state bias conditions. Initially, preliminary static characterizations have been carried out in order to evaluate DC performance and to determine which characteristics are of interest to evaluate the device degradation. Afterwards, constant voltage stress tests have been exploited to investigate the failure distribution by means of the shape factor of the Weibull plots and a degradation trend in temperature was observed. In order to address the physical reasons for the Weibull behavior, several experimental techniques (e.g. step stress, C-V, pulsed and electroluminescence measurements, sweep to breakdown) have been used. Eventually, a new device generation was evaluated in order to validate the formulated hypotheses.
2023
OFF-state drain reliability of enhanced mode AlGaN/GaN power HEMTs: TDDB and avalanche processes
The aim of this thesis work consists in the identification and modeling of the physical mechanisms that limit the stability and the performance of enhanced-mode AlGaN/GaN High Electron Mobility Transistors in OFF-state bias conditions. Initially, preliminary static characterizations have been carried out in order to evaluate DC performance and to determine which characteristics are of interest to evaluate the device degradation. Afterwards, constant voltage stress tests have been exploited to investigate the failure distribution by means of the shape factor of the Weibull plots and a degradation trend in temperature was observed. In order to address the physical reasons for the Weibull behavior, several experimental techniques (e.g. step stress, C-V, pulsed and electroluminescence measurements, sweep to breakdown) have been used. Eventually, a new device generation was evaluated in order to validate the formulated hypotheses.
HEMTs
Reliability
GaN
OFF-state
TDDB
File in questo prodotto:
File Dimensione Formato  
Dell'Andrea_Matteo.pdf

accesso riservato

Dimensione 35.64 MB
Formato Adobe PDF
35.64 MB Adobe PDF

The text of this website © Università degli studi di Padova. Full Text are published under a non-exclusive license. Metadata are under a CC0 License

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12608/69343