Growth and characterization of Si-doped beta-(InxGa1-x)2O3 thin films by mistCVD

This study examines the growth of indium-gallium oxide (InxGa1-x)2O3 thin films by the MistCVD method. The investigation is centered on the beta phase, the most stable among the crystalline phases, and a topic of significant research interest for the development of high-power electrical devices. The MistCVD method facilitates the production of gallium oxide-based thin films, enabling the achievement of high crystallinity thin films efficiently and cost-effectively. The primary objective is to determine the optimal growth conditions for the production of high- conductivity thin films, with the ultimate goal of developing high electron mobility transistors (HEMTs) based on the heterostructure (AlyGa1-y)2O3/(InxGa1-x)2O3. To gain a more detailed characterization of the grown samples, X-ray diffraction (XRD) methods were employed to evaluate the coherent growth and the incorporated indium percentage in the alloy. Additionally, the electrical properties were evaluated through the Hall mobility, and the morphology was also examined. In the first section, we will present and discuss the results of our investigation, focusing on the conditions that yield the highest conductivity in undoped samples. In the second section, we will consider the impact of silicon doping on crystal quality and electrical properties, examining both the effects of varying quantities of doping and the influence of specific growth conditions. Subsequently, mathematical models will be presented to describe the relationship between the growth conditions and the main properties, allowing the prediction of future results and the design of films. The development of this work was undertaken during the exchange period at the Kyoto Institute of Technology (KIT).