Effect of Vibration on Expected Life of IGBT Modules

This study assesses the reliability of Insulated Gate Bipolar Transistor (IGBT) modules exposed to mechanical vibrations typical in electric vehicles and industrial electronics. The effects of varying vibration frequencies and amplitudes on the Expected Life of IGBT modules are evaluated, mainly focusing on crack failures. Using Finite Element Analysis (FEA), critical stress points that contribute to mechanical failures are identified. Results show a significant correlation between failure rates and vibration profiles, especially at frequencies near the resonant frequency of bond wires, which notably accelerate fatigue. Recommendations to improve mechanical stability are provided, enhancing the durability and reliability of IGBT modules in vibration-intensive environments. This research offers key insights for power electronics manufacturers and designers.