In this work of thesis a design a pseudo-differential Radiofrequency Power Amplifier in a 16nmFinFET technology by Intel® is presented. The stacked structure is implemented in order to achieve an assigned 20 dBm output power in a 10-16 GHz bandwidth. The input and output matching networks cover a crucial role in the amplifier performances thus doubly-tuned transformer matching network were designed as they particularly fit with a differential circuit. The porposed PA shows a simulated power gain of 18 dBm and 22-dBm output-referred 1-dB compression point whereas the saturated power, PSAT , and the peak PAE are 23 dBm and 23% respectively. These values are obtained by simulations conducted on Cadence Virtuoso ® by means of real passive components. Additionally, a brief overview of the technology characterization is provided

In this work of thesis a design a pseudo-differential Radiofrequency Power Amplifier in a 16nmFinFET technology by Intel® is presented. The stacked structure is implemented in order to achieve an assigned 20 dBm output power in a 10-16 GHz bandwidth. The input and output matching networks cover a crucial role in the amplifier performances thus doubly-tuned transformer matching network were designed as they particularly fit with a differential circuit. The porposed PA shows a simulated power gain of 18 dBm and 22-dBm output-referred 1-dB compression point whereas the saturated power, PSAT , and the peak PAE are 23 dBm and 23% respectively. These values are obtained by simulations conducted on Cadence Virtuoso ® by means of real passive components. Additionally, a brief overview of the technology characterization is provided

Design of a Radiofrequency Power Amplifier in a 16nm-FinFET technology

PIACENZA, CARLO
2023/2024

Abstract

In this work of thesis a design a pseudo-differential Radiofrequency Power Amplifier in a 16nmFinFET technology by Intel® is presented. The stacked structure is implemented in order to achieve an assigned 20 dBm output power in a 10-16 GHz bandwidth. The input and output matching networks cover a crucial role in the amplifier performances thus doubly-tuned transformer matching network were designed as they particularly fit with a differential circuit. The porposed PA shows a simulated power gain of 18 dBm and 22-dBm output-referred 1-dB compression point whereas the saturated power, PSAT , and the peak PAE are 23 dBm and 23% respectively. These values are obtained by simulations conducted on Cadence Virtuoso ® by means of real passive components. Additionally, a brief overview of the technology characterization is provided
2023
Design of a Radiofrequency Power Amplifier in a 16nm-FinFET technology
In this work of thesis a design a pseudo-differential Radiofrequency Power Amplifier in a 16nmFinFET technology by Intel® is presented. The stacked structure is implemented in order to achieve an assigned 20 dBm output power in a 10-16 GHz bandwidth. The input and output matching networks cover a crucial role in the amplifier performances thus doubly-tuned transformer matching network were designed as they particularly fit with a differential circuit. The porposed PA shows a simulated power gain of 18 dBm and 22-dBm output-referred 1-dB compression point whereas the saturated power, PSAT , and the peak PAE are 23 dBm and 23% respectively. These values are obtained by simulations conducted on Cadence Virtuoso ® by means of real passive components. Additionally, a brief overview of the technology characterization is provided
Power Amplifier
Radiofrequency
16nm
Lauree magistrali
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12608/73649