Study and simulation of switching power supplies for nuclear fusion applications

The main objective of this thesis is to investigate the possibility of using SiC based transistors and diodes in power electronics within power supplies designed to power highly inductive loads, such as the superconducting magnets of a magnetically confined fusion tokamak. The thesis project focuses on three key aspects. The first aspect of this study involves a comprehensive review of the literature on wide-bandgap semiconduconductors SiC and GaN, emphasising their advantages over traditional semiconductors and their construction characteristics. It is crucial to have a thorough under-standing of the characteristics of these materials to address the challenges and fully exploit the benefits they offer in power electronics. The second part of the thesis focuses on the simulation of an AC/DC power supply using Si-IGBT and SiC-MOSFET components. The simulation focuses on a highly inductive load, represented by a poloidal magnet with a specific and previously outlined behavior. The objective is to study the impact of power bridges based on Si-IGBT and SiC-MOSFET elements on the response of the power supply when subjected to continuous DC regulation and control on the load side, with voltages of a few kilovolts. This simulation aims to analyze the advantages and disadvantages of using Si-IGBT and SiC-MOSFET semiconductors in this type of application and to determine which family performs better. The evaluation will focus on aspects such as power efficiency, switching speed and system stability. Simulation provides an opportunity to deepen understanding of the practical and theoretical aspects of implementing advanced technologies. The third part of the study includes a detailed analysis of parallelisation techniques and possible strategies to make the current distribution more balanced. This will lay the foundation for future developments in the design and implementation of next-generation power supplies.