Characterisation and reliability analysis of hydrogenated amorphous Silicon Heterojunction (a-Si:H) photovoltaic cells using Light Beam Induced Current (LBIC) technique

This work is intended to focus on the electrical characterisation and surface recombination analysis on silicon heterojunction (SiHJ) solar cells. The cells have been subjected to reliability test by means of localized damage and subsequent temperature stress. The electrical characterisation has been performed by dark and light current-voltage measurements. The results give us parameters to do comparison of the different stages of stresses and defect evolution. The surface recombination analysis (SR) is done by means of Light Beam Incuded Current (LBIC) technique. This technique is performed by impinging a laser beam onto the solar cell and measuring the resulting current. The obtained results creates a photo-induced current map of the cell. It is presented an LBIC map for each step of the stresses and the change of surface recombination has been investigated.