Thermal stability of SnGe alloy for q-bit applications.

Germanium and its alloys are emerging as proposed materials for the production of quantum well and qubit single-hole devices. In particular, tin-germanium (GeSn) epitaxial alloys is under investigation be used as active materials for quantum confinement. The realization of functional quantum devices requires material stability during the thermal cycles needed for device processing. The aim of this thesis is to enhance the physical understanding of SnGe materials and, in particular, to test and potentially model their thermal stability, providing precise constraints for the processing flow in collaboration with Tyndall University. The work will involve the use of Rutherford Backscattering Spectrometry (RBS) and channeling techniques to characterize the Sn concentration and lattice location in epitaxial as-grown materials. Strain status will be characterized using high-resolution X-ray diffraction (HRXRD). The samples will then undergo thermal treatments at various times and temperatures to investigate the structural evolution of the material under different conditions. The resulting data will be modeled to provide a physical assessment of the thermal stability.