Experimental research regarding the hysteresis phenomena in the output capacitance of different GaN HEMT devices with the objective of better understanding when this non ideality is dominant and if there can be possible circuital solution to minimize the impact of the hysteresis.
Experimental research regarding the hysteresis phenomena in the output capacitance of different GaN HEMT devices with the objective of better understanding when this non ideality is dominant and if there can be possible circuital solution to minimize the impact of the hysteresis.
Characterization of the hysteresis in the output capacitance of GaN HEMT power devices
DE BONI, DAMIANO
2024/2025
Abstract
Experimental research regarding the hysteresis phenomena in the output capacitance of different GaN HEMT devices with the objective of better understanding when this non ideality is dominant and if there can be possible circuital solution to minimize the impact of the hysteresis.File in questo prodotto:
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De_Boni_Damiano.pdf
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Utilizza questo identificativo per citare o creare un link a questo documento:
https://hdl.handle.net/20.500.12608/90309