Analysis of single-event-effects energy deposition in charge-trap 3D Flash memories

The aim of this thesis is to investigate and quantify the effects of ionizing radiation in the space environment on charge-trap 3D Flash Memories. In particular, single-event-effects energy deposition is studied. In the first part, Flash Memories are presented, highlighting the principal features of the main technologies. Then, space radiations and their effects on electronic devices are introduced, with a particular focus on Single Event Effects (SEEs). With this background, it was possible to simulate irradiation on a charge-trap 3D Flash Memory geometry, carrying out Monte Carlo simulations utilizing the European Space Agency Geant4 Radiation Analysis for Space (ESA GRAS) tool. All simulations were run on the DEI computing cluster using a Singularity container specifically configured for this software. The energy deposition of three different heavy ions was compared for different cell regions, layer depths, cell diameters and irradiation angles.