Dynamic Rdson setup and measurements on Normally-on and Normally-off GaN-HEMT power electronic devices

The main non-ideality of interest in GaN HEMTs is the current collapse. This effect is related to electronic traps in the device structure. It is possible to evaluate the current collapse by measurements of gate-lag and drain-lag. The term gate lag is used to describe the slow transient response of the drain current, when the gate voltage is pulsed. The gate lag phenomen can also be defined as an increase in the dynamic Rdson value (measured under pulsed conditions), comparing with the static Rdson value (measured in steady state). In this work we will build the GaN DReaM (GaN Dynamic Rdson Measurement): a particular setup capable of measuring the dynamic Rdson of devices both on package level and on wafer level. Then we will compare the measured dynamic value of Rdson with the static Rdson, with the aim of evaluating the level of degradation of the Rdson