One of the key factors of this technology is the transformation of the absorber layer by an activation treatment with CdCl2. I have analyzed the recrystallization treatment by tuning the annealing temperature from 310C up to 410C in air. Activated CdTe layer have been analyzed by means of XRD, AFM, J-V, C-V, DLCP, EQE

Study of the post growth recrystallization of CdTe for the fabrication of low cost high efficiency solar cells

Xu, Bing Lei
2014/2015

Abstract

One of the key factors of this technology is the transformation of the absorber layer by an activation treatment with CdCl2. I have analyzed the recrystallization treatment by tuning the annealing temperature from 310C up to 410C in air. Activated CdTe layer have been analyzed by means of XRD, AFM, J-V, C-V, DLCP, EQE
Scuola di Ingegneria
2014-04-07
Solar cells, CdTe, CdCl2, XRD,I-V, C-V, DLCP, EQE
Romeo, Alessandro
Lauree magistrali
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12608/17826