Study of influence of bulk on break-down and trapping phenomena in power AlGaN/GaN MIS-HEMTs grown on Si-substrate

This thesis work is based on the study of trapping phenomena in power HEMTs based on Gallium-Nitride (GaN). In particular, MIS-HEMT devices are studied and characterized. The main features of these devices are: MIS structure at gate contact, double heterostructures, Silicon substrate. Measurements performed: DC characterization, double pulse, stress and recovery transients, back-gating measurements, breakdown in off-state, on-the-fly measurements