The present thesis is aimed to show the results achieved during a five months internship period at the European Space Agency-European Space Research and Technology Centre (ESA-ESTEC). The purpose of this work is to investigate Total Ionizing Dose (TID) Effects on semiconductor power devices under static and dynamic bias with particular attention to power MOSFETs
Investigation of Total Ionizing Dose Eects on Semiconductor Power Devices under Static and Dynamic Conditions. Studio degli Effetti della Dose Totale delle Radiazioni Ionizzanti sui Dispositivi di Potenza a Semiconduttore in Condizioni Statiche e Dinamiche
Valente, Eugenio
2016/2017
Abstract
The present thesis is aimed to show the results achieved during a five months internship period at the European Space Agency-European Space Research and Technology Centre (ESA-ESTEC). The purpose of this work is to investigate Total Ionizing Dose (TID) Effects on semiconductor power devices under static and dynamic bias with particular attention to power MOSFETsFile in questo prodotto:
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Utilizza questo identificativo per citare o creare un link a questo documento:
https://hdl.handle.net/20.500.12608/25545