The thesis begins with the introduction of Gallium Nitride (GaN) technology used to make semiconductors. We discuss its advantages/disadvantages with particular reference to its implementation in transistors. We present the areas in which it is used. Introduction to DC-DC Buck converters: general overview and applications. We compare the two different circuit topologies, respectively Buck with diode and Buck Half-Bridge, analyzing the main physical quantities of interest and highlighting any advantages and critical issues in the use of one topology compared to the other and vice versa. We then proceed with the specific study of the device that uses GaN in the Buck converter. The board in question is LMG34XX-BB-EVM which acts as the motherboard on which the LMG3410EVM-018 board containing the GaN FET devices in Half-Bridge configuration is placed. We proceed with the analysis of the datasheets provided by the manufacturer, focusing on the logical and circuit aspects.
La tesi inizia con l'introduzione nella tecnologia del Nitruro di Gallio (GaN) utilizzata per realizzare semiconduttori. Si va a discutere i suoi vantaggi/svantaggi facendo riferimento in particolare alla sua implementazione nei transistor. Si presenta gli ambiti in cui essa viene utilizzata. Si fa introduzione nei convertitori DC-DC Buck: panoramica generale e applicazioni. Si confrontano le due topologie circuitali diverse, rispettivamente Buck con diodo e Buck Half-Bridge, analizzando le principali grandezze fisiche d'interesse ed evidenziando eventuali vantaggi e criticità nell'utilizzo di una topologia rispetto all'altra e viceversa. Si procede poi con lo studio specifico del dispositivo che sfrutta GaN nel convertitore Buck. La scheda in questione è LMG34XX-BB-EVM che agisce da motherboard su cui viene piazzata la scheda LMG3410EVM-018 contenente i dispositivi GaN FET in configurazione Half-Bridge. Si procede con l'analisi dei datasheet forniti dal produttore focalizzandosi sugli aspetti logici e circuitali.
Studio ed approfondimento del funzionamento di convertitore di tipo Buck basato su dispositivi GaN
PETRENKO, GRIGORY
2023/2024
Abstract
The thesis begins with the introduction of Gallium Nitride (GaN) technology used to make semiconductors. We discuss its advantages/disadvantages with particular reference to its implementation in transistors. We present the areas in which it is used. Introduction to DC-DC Buck converters: general overview and applications. We compare the two different circuit topologies, respectively Buck with diode and Buck Half-Bridge, analyzing the main physical quantities of interest and highlighting any advantages and critical issues in the use of one topology compared to the other and vice versa. We then proceed with the specific study of the device that uses GaN in the Buck converter. The board in question is LMG34XX-BB-EVM which acts as the motherboard on which the LMG3410EVM-018 board containing the GaN FET devices in Half-Bridge configuration is placed. We proceed with the analysis of the datasheets provided by the manufacturer, focusing on the logical and circuit aspects.File | Dimensione | Formato | |
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https://hdl.handle.net/20.500.12608/62678