Studio di fasci ad altissima energia per il test di eventi singoli su dispositivi elettronici.

This thesis develops a Geant4/GRAS simulation workflow to interpret heavy-ion energy-deposition spectra measured with a silicon PIPS diode within the HEARTS beam-quality campaigns at CERN IRRAD (Pb-208) and at GSI Cave A (U-238). A detailed detector and package model is used to account for multiple trajectory families (ions crossing the front aperture versus crossing additional package materials), which naturally produce multi-component deposited-energy distributions in the active silicon volume. The beam energy at the DUT is defined from a dedicated upstream scoring plane, allowing a consistent run-by-run characterization of the incident beam and a quantitative mapping between degrader thickness and residual energy at the DUT. Energy-loss straggling is characterized using robust distribution descriptors (percentiles), and deposited-energy spectra are analyzed with a Region-Of-Interest-based fitting strategy based on Gaussian components to extract peak positions and widths across configurations. The results reproduce the main spectral topologies over a broad range of energies and LET values and highlight an increased sensitivity to acceptance and material-budget details in the lowest-energy (near-stopping) regime. In addition, a complementary TCAD study (Synopsys Sentaurus) is presented for a 300-µm PIN diode under reverse bias, where heavy-ion charge generation is modeled via a LET-parameterized ion track and the simulated transient collection current is compared against CERN waveform data after consistent resampling and preprocessing, providing a time-domain check of the TCAD model against CERN transient data.