In This work the resistance of CMOS transistors was tested against the effects of the irradiations. The divices were irradiated with X ray in the worst bias condition. After it, the parameters of usage of the devices were compared with the same parameters before irradiation trying to understand what happened and how this devices reacted to the irradiation.
Effetti della Radiazione su transistor in Tecnologia CMOS 28nm
De Gaspari, Davide
2016/2017
Abstract
In This work the resistance of CMOS transistors was tested against the effects of the irradiations. The divices were irradiated with X ray in the worst bias condition. After it, the parameters of usage of the devices were compared with the same parameters before irradiation trying to understand what happened and how this devices reacted to the irradiation.File in questo prodotto:
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Utilizza questo identificativo per citare o creare un link a questo documento:
https://hdl.handle.net/20.500.12608/24362