Experimental characterization of sub 0.15 µm-gate In(Ga)AlN/GaN HEMTs adopting Fe compensation or double heterojunction for carrier confinement

TONELLO, ANDREA
2020/2021

2020
Experimental characterization of sub 0.15 µm-gate In(Ga)AlN/GaN HEMTs adopting Fe compensation or double heterojunction for carrier confinement
GaN
Hemt
RadioFrequency
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12608/3614